Significant Cooperation Between Aselsan and Bilkent University

"We are acquiring the most critical technology for radar applications" said Murad Bayar - Undersecretary for Defence Industries regarding the studies for the development of Gallium Nitrate (GaN) compound in Turkey. The compound was first used in the defence technologies.

A Memorandum of Understanding between Aselsan and Bilkent University on "Advanced Technology Investment for Gallium Nitrate Transistor and Integrated Circuit Production" was signed in a ceremony.

In his speech at the ceremony, Undersecretary for Defence Industries Murad Bayar stated that system engineering made headway towards the design and module processestogether with Aselsan and now the material production shall be launched. Bayar noted that this technology shall be used in radar production and added "We are acquiring the most critical technology for radar applications".

Aselsan General Manager Cengiz Ergeneman stated that in order to achieve technological independence, Turkey has to develop and produce such advanced systems.

Bilkent University’s Chancellor, Prof. Abdullah Atalar, highlighted that the project will set a valuable precedent in terms of using university research resources to develop "real-life" products.

Aselsan Radar, Electronic Warfare and Intelligence Systems (REHİS) Design Director Oğuz Şener mentioned that GaN transistors are commercially manufactured in only four countries worldwide but their salesare restricted and subject to government - level authorization.Stating that the establishment of an infrastructure and the development of the GaN transistor production process shall be accomplished in a short period of time, Şener announced that the production of the first GaN transistors to be used in Turkey’s new-generation indigenous radar shall begin in 2016.

The Director of Bilkent University’s Nanotechnology Center (NANOTAM), Prof. Ekmel Özbay, stated that after 10 years of research efforts, GaN technology has been developed to the point where it is ready for commercial use. Prof. Özbay explained that this technology will be used for the production of high-powered GaN nano-transistors and nanofabricatedmaterials.

What is GaN Technology?

Gallium Nitrate (GaN)is a newly developed semiconductor material which has become a highly popular research area in recent years due to its outstanding physical characteristics. GaN technology, which has been developed indigenously, is targeted for use in both commercial and military applications.

As a result of the investment stipulated in the abovementioned agreement, GaN technology based productsshall be manufactured with national capabilities. Worldwide, these products are extensively used in radars, transponders, jammers and new-generation cellular phones. More critically, high-performance versions of these devices are used in the defence industry, and their sale is therefore tightly controlled.

Having outstanding features, GaN technology shall make it possible to produce high-performance GaN transistors that are half size of but five times more powerful than the existing transistor technologies. Studies in our country for the GaN technology that is required for the production and development of more efficient radars with long ranges started in 2002. The required infrastructure was established in Bilkent University’s Nanotechnology Center (NANOTAM) within the scope of the first project that was launched by the Undersecretariat for Defence Industries with the participation of Aselsan and Bilkent University. Following this project, other research projects for the needs of Aselsanbased on this product have been executed successfully between Aselsan and Bilkent University since 2006.